The development of the third generation semiconductor materials and devices represented by GaN is the core and foundation of the emerging semiconductor industry, and its research and development shows a rapid development trend. Among GAN-based optoelectronic devices, blue light-emitting diode LED was the first to realize commercial production and successfully developed blue LED and LD. After that, the research direction shifted to GaN UV detector. GaN materials also have a large application market in microwave power. Gallium nitride semiconductor switch is hailed as a new milestone in semiconductor chip design. Scientists at the University of Florida have developed an important device that could be used to create a new type of electronic switch that provides a smooth, uninterrupted power supply.

New semiconductor materials are being used more and more in industry. New semiconductor material characterized by its structural stability, with excellent electrical properties, and low cost, can be used in the manufacture of modern electronic equipment widely used in our country compared with other countries in this respect there is a significant portion of the gap, usually performed on some basic instruments of production and processing, in recent years, In view of our weakness compared with other countries, many departments of the country have organized a unified group of all aspects to provide effective leadership, and then make joint efforts to develop more high-level semiconductor materials. Only in this way can we adapt to the progress and development of our industrialization to a great extent, and provide more powerful power for our social progress. First of all need to be further research and development of superlattice quantum well material, at present our country the development of semiconductor materials in this context, should rise to a large degree of brightness, red, green and blue light materials and optical materials, the development of the main research direction in the future, according to the market at the same time, update the generation of electronic devices and circuit requires strengthening, Carefully analyze and discuss the needs of these optoelectronic structure materials in the future production process, and then to meet the future direction of semiconductor development in the world, we need to choose more optimized layout, and then do a good job in related development and research. In this way, the establishment of a better communication mechanism between various research and development institutions and enterprises can greatly realize the further development and utilization of high-temperature semiconductor materials.